다공성 실리콘 기반의 광대역 블랙 실리콘의 제작 및 특성

초록

In this paper, we report on the characterization of broad-band black silicon based on porous silicon. The fabricated structure was made of single and multi-layer porous silicon. We used heavily doped p-type silicon wafer(<100>-oriented, 0.005Ω·cm). The electrolyte were prepared form a 48 % HF solution. The HF concentration was 33.3 wt.-%. The applied current density decreased from 90 to 6 mA/cm2. Accordingly, etching time increased from 1.2 to 133s that considering the natural-drifts in thickness of the PS layer.