RF 마그네트론 스퍼터링을 이용한 FBAR 소자용 ZnO 박막의 특성

초록

Due to the rapid development of wireless networking system, researches on the eommunication devides are mainly focus on microwave frequency devices such as filters, resonators and phase shifters. Among them Film bulk acoustic resonator(FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/SiO2/Si wafer and then crystallne propeties and surface morphology. X-ray diffration (XRD) and Scanning Electron Microscope(SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition condition pressures, the peak intensites of ZnO(002)plane were increased until 300oC then decreased rapidly at the sputtering conditions of RF power of 213W and working pressure of 15mTorr, ZnO film had excellent c-axis orientation , surface morphology and adhesion to the substrate, In condlusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR application