Unraveling the growth mechanism of 2D WSe2 mediated by liquid precursor

초록

Two-dimensional transition metal dichalcogenides (TMDs) have attracted significant attention for their potential in electronic and optoelectronic devices. While chemical vapor deposition (CVD) is a principal technique for producing large-area monolayer TMDs, the use of metal oxide precursors with high melting points poses various synthetic challenges. As an alternative, metal salt-based precursors, especially Na-based oxides, have emerged because oftheir water-solubility and low melting points. However, producing a consistent monolayer (ML) with large-area coverage using these precursors still necessitate optimized strategies. In this study, we provide a systematic investigation of the influence of various process variables on the CVD growth of monolayer (ML) WSe2 usingNa2WO4 andNa2SeO3. We investigated parameters such as precursor concentration, substrate distribution, and CVD growth variables like temperature and carrier gas flow rate to discern their relationship with the resultant quality ofML WSe2. Our findings offer valuable insights into the fabrication oflarge area TMD MLs, which hold promise for electronic and optoelectronic applications.