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Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory
- 제목
- Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory
- 저자
- RINO CHOI
- 학회명
- Solid State Devices and Materials
- 학회 개최일
- 2024-09-01 ~ 2024-09-04