Preparation and Photoluminescence Properties of SiO2-Passivated Nanoporous Silicon Nanowires

초록

We have fabricated nanoporous silicon-core/SiO2-shell nanowires by using a two-step process: thermal oxidation and sputtering. The structure and photoluminescence (PL) properties of the core/shell nanowires are investigated by using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and PL analysis techniques. The cores and shells of the as-synthesized nanowires have nanocrystalline and amorphous SiO2 structures, respectively. The effects of SiO2 coating and annealing on the photoluminescence properties of the nanoporous silicon nanowires are investigated. The origin of the change of the PL emission in intensity are also discussed.