Controlled Growth of Bi2O3 Nanowires by Thermal Evaporation of BI Powders

초록

Highly straight single crystal Bi2O3 nanowires with sixes of 50 - 300 nm in diameter and 50 - 100 μm in length can be successfully grown on c-plane sapphire substrate by thermal evaporation. The straightness of the Bi2O3 nanowire is stringly dependent on the oxygen partial ressure. In the thermal evaporation process. HRTEM and SAED revealed the crystalline nature of the Bi2O3 nanowires.