Fabrication and optical properties of ZnO sheathed Ga2O3 nanowires

초록

Beta-gallium oxide (β-Ga2O3) is a wide band-gap semiconductor (Eg 4.9 eV) with a monoclinic structure. This material has potential applications in high temperature gas sensors as well as optoelectronic devices in the deep-ultraviolet region owing to its conductive and luminescence properties. Furthermore, one dimensional (1D) nanostructures of metal oxides including β-Ga2O3 have been a matter of concern due to their excellent crystalline quality, chemical stability, optical properties, and high surface-to-volume ratio. Various forms of β-Ga2O3 1 D nanostructures have been synthesized by using various methods such as direct current (dc) arc discharge of GaN powder with catalyst, thermal evaporation of Ga powders, thermal annealing of GaN powders, thermal annealing of GaAs in an oxygen atmosphere, thermal reaction of Ga2O3 powders with graphite of active carbon/carbon-nanotubes, silica-assisted Fe catalytic growth, metal organic chemical vapor deposition, etc [1]. Here we adopted the thermal evaporation technique of GaN powder for synthesis of the Ga2O3 nanowires since it is easiest and offers 1D nanowires with a relatively good quality.