Over 10um/minute GaAs via etch and defect control under new process regime using cl2-based gas chemistry

초록

GaAs backside via etch process is one of the most critical processes in the GaAs monolithic microwave integrated circuit(mmic) devicemanufacturing. low inductance grounds are critical for the field effect transistors(fet) and the mmics. since the need of the GaAs backside via etch process was created, the desire for a high etch rate GaAs backside via process has been increased in order to reduce th device manufacturing cost. However, the strong demand has not been fully satisfied in the GaAs device industry yet. the inherent properties of GaAs provide a lot of advantages on the electrical performance of the high frequency devices. However at the same time, the complicated material properties require much more comprehensive process development works.