Preparation of PZT ferroelectric thin films by sol-gel processing

초록

With the advance of the science and fabrication technology of thin films, ferroelectric thin film materials have a wide application in optics, electrics and space technology. Pb(Zr, Ti)O3 PZT) thin films are an important material for preparing ferroelectric random-access memories (FRAMs), piezoelectric sensors, pyroelectric infrared datectors and surface acoustic wave (SAW) devices. Thin films for these applications must have a reproducible exact stoichiometric ratio, homogeneous composition disdtribution, compact structure and good electric properties. These properties can be obtained in ferroelectric Pb(Zr, Ti)O3 thin deposited by sol-gel processing.