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2D Quantum Mechanical Device Modeling and Simulation:FinFET having an Isolated n+/p+ Gate Region Strapped with Metal and Poly-silicon

  • WON TAEYOUNG
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2D Quantum Mechanical Device Modeling and Simulation:FinFET having an Isolated n+/p+ Gate Region Strapped with Metal and Poly-silicon
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WON TAEYOUNG
학회명
Micro-and Nano-Engineering 2006 32nd International Conference

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