Solution-Processable and Physicochemically Stable Gate Dielectrics for Organic Field-Effect Transistor Applications

초록

Physicochemically stable polymer blend or polymer/inorganic gatedielectrics are used for high performance organic fieldeffect transistors. On polystyrene-coupled SiO2 or AlOx dielectrics, various organic semiconductors can develop highly ordered crystalline structures that provide higher fieldeffect mobilities (μFETs) than other surfacemodified systems, and negligible hysteresis in OFETs. In particular, the use of PS-coupled AlOx nanodielectrics enables a solutionprocessable triethylsilylethynyl anthradithiophene OFET to operate with μFET ~ 1.26 ㎠/Vs at a gate voltage below –1 V. In addition, a complementary metaloxide semiconductor-like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS-coupled SiO2 dielectric.