PL and EL Features of P-type Porous Silicon Prepared by Electrochemical Anodic Etching

초록

The PS was prepared by electrochemical anodic etching of p-type (001) silicon wafers in a solution of HF:C2H5OH:H2O=1:2:1. The surface morphology of the PS and the optical and I-V features of the electroluminescence devices based on the PS were analyzed; indium tin oxide contacts were used as transparent electrodes in the EL device.