PLT(5) 박막의 Switching 및 Retention 특성에 관한 연구

초록

We fabricated PLT(5) thin film on Pt/TiOx/SiO2/Si substrate by using sol-gel method and investigated leakage current, switching and retention properties. The leakage current density of PLT(5) thin film was 3.56×10-7A/cm2 at 4V. In the examination of switching properties, pulse voltage and load resistance were 2V～5V and 50Ω～3.3kΩ, respectively. Switching time had a tendency to decrease from 520ns to 140ns with the increase of pulse voltage, and also the time was increased from 140ns to 13.7μs with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time was about 143kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching was about 10%. Also, polarization in retention was decreased as much as about 8% after 105s.