A study on a perturbation layer to reduce the total thickness of TaN absorber stack of binary mask in extrene ultraviolet lithography

  • CHANG KWON HWANGBO
제목
A study on a perturbation layer to reduce the total thickness of TaN absorber stack of binary mask in extrene ultraviolet lithography
저자
CHANG KWON HWANGBO
학회명
The 7th international conference on advanced materials and devices (ICAMD 2011)
개최지
라마다 제주 프라자 호텔
학회 개최일
2011-12-07 ~ 2011-12-09