Selective Patterning of p-Type Dopants on MoS2 via Atomic Force Microscopy-Assisted Surface Modification

초록

The selective patterning of gold chloride (AuCl3) dopants on few-layer molybdenum disulfide (MoS2) flakes is investigated with the objective of manipulating the electrical properties of 2D material-based devices. MoS2, renowned for its exceptional properties, is doped with AuCl3 via spin coating. The removal of the dopants is achieved using contact-mode atomic force microscopy (AFM), with control over the extent of dopant obtained by varying the AFM tip's contact force. Scanning electron microscopy and energy-dispersive X-ray spectroscopy confirm the patterning of the dopants. The application of this patterning method to MoS2-based field-effect transistors results in rectified output characteristics, in contrast to the ohmic behavior observed in pristine and fully coated devices. This method offers a valuable approach for customizing MoS2 surfaces, advancing 2D material-based electronic devices and next-generation semiconductor designs with tailored properties.

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