Properties of the IZTO Thin Films Deposited on Polyethylene Terephthalate Substrates with SiO2 Buffer Layer

초록

SiO2 buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on SiO2/PET substrate with different RF power of 30 to 60W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50W and 3mTorr exhibited the best characteristics, where figure of merit was 4.53×10^-3 Ω^-1, resistivity, 4.42×10^-4 Ω-cm, sheet resistance, 27.63 Ω/sq., average transmittance (400 - 800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on SiO2/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.