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초록
The etch characteristics of E-ICP and ICP are compared for the improvement of SiO2 etch process Etch rate and etch pattern profile are measured by a-step surface profiler and SEM respectively. The E-ICP provides improved characteristics on etch rate and surface profile in comparison to ICP process.
- 제목
- SiO2 식각특성 개선을 위한 E-ICP와 ICP 비교
- 제목 (타언어)
- Improvement of SiO2 etching characteristics by E-ICP
- 저자
- PARK SEGEUN