Synthesis of diamond films by RF plasma- assisted chemical vapor deposition

초록

Synthetic diamond films were deposited on pretreated silicon substrate in activated gas phase using RF plasma-assisted CVD. We investigated the influence of CH4 and O2 gases on nucleation, growth rate, facets of diamond crystal. In H2-CH4 gas mixture, we observed well-faceted polyhedron particles at 0.3% CH4 concentration and spherical particles at the higher CH4 concentration. The deposited diamond films were analyzed by SEM, XRD and Raman spectroscopy.