RF 스퍼터링을 이용한 AlN 박막의 증착특성에 관한 연구

초록

This study shows the change of the structural characteristics of AlN thin film deposition with the change of the deposition conditions such as Ar/N2 gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AlN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of N2 to Ar. Especially the thin film deposited at 10% of Ar/N2 gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.