The effect of the process parameters on the electrical properties of Ni-Cr-Si Alloy

초록

For thin resistor film with low TCR(Temperature coefficient of resistance) and high resistivity, we have fabricatied thin films using the DC/RF magnetron sputtering of 51wt% ni-41wt%Cr-8wt% Si alloy target ande studied the effect of the process parameters on the electrical properties. Resistivity was 172[u.cm] and 209[u.cm] and TCR were 52[ppm/c] and 25[ppm/c] for RF and DC as a power source, respectively. The sheet resistance and TCR increase with increasing the substrate and annealing temperature. From these results, it is suggested that the sheet resistaned and TCR of thin films can be controlled by variation of sputter process parameters and annealing of thin film.