Homogeneous MoS2-Based NAND and NOR Logic Gates by Longitudinal and Transverse Folded Split-Gates FET

초록

Two-dimensional van der Waals (2D vdWs) materials, such as molybdenum disulphide (MoS2), black phosphorus (BP), and hexagonal boron nitride (h-BN), have attracted massive research interests for the future electronics and its applications. For example, MoS2-based basic logic circuit and memory device studies have been demonstrated for their high performances and utilizations for 2D electronics. In order to organize NAND (or NOR) logic gate, at least two n-type transistors should be serially (or parallel) connected in pull-down network of inverter circuit for constructing a binary input logic gates in general. In this work, we demonstrate n-type MoS2-based two distinguished split-gate field-effect transistors, which have longitudinal or transverse gapped gate electrodes to channel direction, respectively for an ‘AND-FET’ or an ‘OR-FET’ switching transistor. From our approach, NAND (or NOR) logic gate can be achieved on a single MoS2 active channel by employing our AND-FET (or OR-FET) as a folded structure of the series (or parallel) connection of two driver transistors.