Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

초록

In this work, we demonstrate highly scaled, non- volatilememory transistors with ferroelectric Zr-doped HfO2(HZO) as gate insulator. Omega-gate transistors with gate length similar to 30 nm andwidth similar to 85 nmwere fabricated on similar to 20 nm thick SOI. We demonstrate robust memory operation with <= 100 ns program and erase speed at +/- 5 V, projected memory retention time up to 10 years at 85 degrees C, and similar to 0.5 Vmemory window after 108 endurance cycles. The impact of V D on erase speed provides insights into the importance of holes on memory operation.

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