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Quantum Mechanical Device Modeling: FinFET Having an Isolated n+/p+ Gate Region Strapped with Poly-silicon

  • WON TAEYOUNG
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Quantum Mechanical Device Modeling: FinFET Having an Isolated n+/p+ Gate Region Strapped with Poly-silicon
저자
WON TAEYOUNG
학회명
2006 International Conference on Nano Science and Nano Technology

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