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Tunable Ferroelectric Properties of HfO2 -Based Oxides: Role of Aluminum Doping and Bottom Electrodes
- Han, Changhyeon;
- Kwon, Ki Ryun;
- Jeong, Soi;
- Kwak, Been;
- Yim, Jiyong;
- ... Choi, Rino;
- 외 3명
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9초록
We investigate the impact of Al concentrations and different bottom electrodes on the crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in HfxZr1-xO2 (HZO) materials. Our results reveal that these variations are strongly linked to oxygen vacancy (V-O) formation and the stabilization of the tetragonal (t) phase. Higher Al concentrations enhance t-phase stability, suppressing the transition to the orthorhombic (o) phase. This effect, coupled with the bottom electrode configuration, plays a critical role in shaping the properties of HZO. These findings provide valuable guidelines for optimizing ferroelectric (FE) devices through precise control of doping levels and electrode materials.
키워드
Iron; Electrodes; Tin; Doping; Electrostatic discharges; Hafnium oxide; Energy efficiency; Dielectric constant; Zirconium; X-ray diffraction; Ferroelectric (FE); heterostructure; HfxZr1-xO2; metal-FE-metal (MFM); morphotropic phase boundary (MPB)
- 제목
- Tunable Ferroelectric Properties of HfO2 -Based Oxides: Role of Aluminum Doping and Bottom Electrodes
- 저자
- Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong
- 발행일
- 2025-02
- 유형
- Article
- 권
- 72
- 호
- 2
- 페이지
- 635 ~ 639
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1557-9646
P 0018-9383