Tunable Ferroelectric Properties of HfO2 -Based Oxides: Role of Aluminum Doping and Bottom Electrodes

Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

doi:10.1109/TED.2024.3517593

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Tunable Ferroelectric Properties of HfO2 -Based Oxides: Role of Aluminum Doping and Bottom Electrodes

Han, Changhyeon;
Kwon, Ki Ryun;
Jeong, Soi;
Kwak, Been;
Yim, Jiyong;
... Choi, Rino;
외 3명

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초록

We investigate the impact of Al concentrations and different bottom electrodes on the crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in HfxZr1-xO2 (HZO) materials. Our results reveal that these variations are strongly linked to oxygen vacancy (V-O) formation and the stabilization of the tetragonal (t) phase. Higher Al concentrations enhance t-phase stability, suppressing the transition to the orthorhombic (o) phase. This effect, coupled with the bottom electrode configuration, plays a critical role in shaping the properties of HZO. These findings provide valuable guidelines for optimizing ferroelectric (FE) devices through precise control of doping levels and electrode materials.

키워드

Iron; Electrodes; Tin; Doping; Electrostatic discharges; Hafnium oxide; Energy efficiency; Dielectric constant; Zirconium; X-ray diffraction; Ferroelectric (FE); heterostructure; HfxZr1-xO2; metal-FE-metal (MFM); morphotropic phase boundary (MPB)

제목: Tunable Ferroelectric Properties of HfO2 -Based Oxides: Role of Aluminum Doping and Bottom Electrodes

저자: Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

DOI: 10.1109/TED.2024.3517593

발행일: 2025-02

유형: Article

저널명: IEEE Transactions on Electron Devices

권: 72

호: 2

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