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초록
This work was carried out to devel pattern on the nanometer scale using polymerization and plasma etching. This study aimed at developing a resist for the nano process a vacuum lithography process. The thin film plasma polymerization were fabricated by the polymerization of inter-electrode capacitively gas flow system. After delineating the pattern accelerating voltage of 30[kV] ranging the do 1-500[μC/cm2] the pattern was developed type and formed by plasma etching.
- 제목
- 플라즈마 공정을 이용한 완전한 건식리소그래피
- 제목 (타언어)
- A Complete Dry Lithography using Plasma Processes
- 저자
- Lee Duck Chool
- 학회명
- 대한전기학회 추계학술대회