Numerical Study on Recombination Efficiency at S-DPVBi/Alq3 Interface in OLED

초록

In this paper, we report numerical study on the electronic transport in multilayer organic light-emitting devices (OLEDs). Our model includes Poisson’s equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation to account for recombination of carriers. We studied the effect of internal barrier height on the recombination efficiency at the S-DPVBi-Alq3 interface by numericalsimulation. Our simulation revealed that the accumulation on the Alq3 side of the interface will enhance the short-lived overshoot peak if the internal barrier height is decreased. Furthermore, we can be convinced that the supply of electrons is raised with decreasing the internal barrier. Our simulation implies that the accumulated charges cause a delay at s-DPVBi/Alq3 interface which seems to be the cause for the overshoot in temporal response.