Lead-free (K,Na)NbO3 Thick Films for Flexible Non-volatile Memory Applications

초록

We report the sol-gel fabrication and electrical characterization of flexible (K,Na)NbO3 (KNN) thick films. Muscovite mica allows the growth of high-quality polycrystalline KNN thick films with flexible functionality. Because of the trade-off between increase of grain-size and volatilization of alkaline ions, the electrical polarization is optimized at certain temperature of 720 degrees C. The remnant and saturation polarization of flexible KNN films were recorded to P-r = 10.3 mu C/cm(2) and P-s = 23.3 mu C/cm(2), respectively, which are quite close to those of rigid films with the same chemical compositions. The KNN thick films are bendable even up to bending radius of R = 3.1 mm, and the P-r and P-s at bending states are almost the same as compared to those at unbending state. Even in the convex and concave bending, the KNN thick films show excellent non-volatile memory characteristics. The P-r is almost thesameevenafter the10(8) times of switching and the 10(4) sec of retention.

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