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Reduction of the efficiency droop of InGaN quantum-well light-emitting diodes by using an InGaN/GaN strain relief superlattice layer
- 제목
- Reduction of the efficiency droop of InGaN quantum-well light-emitting diodes by using an InGaN/GaN strain relief superlattice layer
- 저자
- RYU HANYOUL
- 학회명
- 9th International Conference on Nitride Semiconductors
- 개최지
- SECC, Glasgow
- 학회 개최일
- 2011-07-10 ~ 2011-07-15