Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors

초록

Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer semiconductor gated by ionogel electrolytes. Electrochemical doping in BBL induces ion pathways in amorphous regions during initial doping, facilitating efficient electron transport. This yields exceptional device performance, including a geometry-normalized transconductance of 4.6 S cm(-1), an ON/OFF ratio of approximate to 10(5), a product of electron mobility and volumetric capacitance (mu C* approximate to 16.4 F cm(-1) V-1 s(-1)), and minimal hysteresis (<0.1 V). These features surpass most reported n-type EGTs, demonstrating the importance of ion-driven electrochemical doping in BBL. Furthermore, we not only fabricate all-polymer complementary inverters, NAND, and NOR gates but also demonstrate flexible circuits by integrating n-type BBL and p-type polythiophene EGTs.