Harnessing Plateau-Rayleigh Instability to Engineer Nanoscale Optoelectronic Junctions on a 2D Semiconductor

초록

Controlling Plateau?Rayleigh (PR) instability at the nanoscale enables the fabrication ofadvanced high-order nanostructures, such as periodic heterostructures, which offer significant advantages including reduced interfacial defects and tunable band structures. In this study, we explore the synthesis of periodic GeS core?shell nanowires by PR instability. Using vapor?liquid?solid (VLS) growth, we demonstrate precise control over the shell diameter and pitch through modulation of the growth duration. Furthermore, we fabricated a mixed-dimensional heterostructure by integrating these GeS nanowires with two-dimensional WSe₂ monolayers. The periodically modulated GeS shells effectively tune the optoelectronic properties of WSe₂ while providing inherent self-passivation that protects the GeS core from surface defects. Nanowires with periodic shell structures and heterostructures with tunable structural and optoelectronic properties demonstrate strong potential for nextgeneration optoelectronic technologies, which are highly promising for optoelectronic devices andsolar energy conversion applications.