A Fast Processing Combination Utilizing Electroless Deposition and Silylation Method for Hybrid Bonding Application

초록

In this study, the low-temperature Cu/SiO2 hybrid bonding is successfully achieved by metal and silane electroless deposition. In particular, a noble metal gold (Au) deposition method on copper (Cu) has been introduced to enhance Cu-to-Cu bonding by improving bond strength and preventing surface oxidation. Additionally, hydrophilic (3-aminopropyl)triethoxysilane (APTES) undergoes hydrolysis and condensation, bonding to the insulating SiO2 layer through Si?O?Si with polymerization, resulting in durable SiO2?SiO2 bonding. Eventually, the Cu-to-Cu bonding with a gap of ca. 20 nm is successfully achieved at low temperature of 250 °C, demonstrating its practical applicability. This study introduces a novel approach for developing high-performance Cu/SiO2 bonding for advanced packaging. 본 연구는 2025년 정부(방위사업청)의 재원으로 국방과학연구소의 지원을 받아 수행된 미래도전국방기술 연구개발사업임(No.915066201) Keywords: Electroless deposition, Intermetallic bonding, Low temperature, Cu/SiO2 hybrid bonding, Advanced packaging.