2차원 포아송슈뢰딩거 해석기를 이용한 FINFET 구조 최적화 연구

초록

We report a numerical device modeling for the optimization of the short-channel performance of FinFET by solving the Poisson and Schr inger equations in a self-consistent manner. The current-voltage (I-V) characteristics calculated from our in-house two-dimensional solver are compared with the experimental data. To suppress the short channel effects of nanometer-scale FinFET, the effect of the structural dimension such as the fin thickness and the channel length was carefully investigated in terms of subthreshold swing, threshold voltage roll-off and drain induce barrier lowering (DIBL). Optimization of the gate length and the Si-fin thickness was accomplished through investigating the variance of transconductance (Gm).