Comparision of epitaxial growth of CoSi2 among Co/Ti, Co/Hf and Co/Nb bilayers of (100)Si

초록

Formation of epitaxial cobalt silicide films on (100)Si using Co/Ti, Co/Hf and Co/Nb bilayers gas been investigated. The degree of easiness in the epitaxial growth of CoSi2 by annealing the metal bilayers on (100)Si at 800℃: was found to stringly depend upon what thin metal layer was used as an epitaxy promoter. Perfect epitaxy of CoSi2 was otained using Co/Ti/(100)Si. Local epitaxy of CoSi2 was obtained using Co/Hf/(100)Si. while epitaxy of CoSi2 was not obtained for the Co/Nb/(100)Si system. Epitaxial growth of Co-Ti-O and Hf-Si-O compounds at high temperatures. These reaction barriers formed at high temperatures make uniform diffusion of Co atoms possible, resulting in the growth of epitaxial CoSi2