Two-Dimensional Quantum Mechanical Modeling for Multiple - Channel FET

초록

Recently, FinFETs have attracted a great deal of attention as a candidate for a nano-scale CMOS FET structure due to inherent immunity to short channel effect and high compatibility with conventional manufacturing process [1, 2]. The conventional FinFET, however, has a shortcoming since a sophisticated multi-fin layout is required for enhancing a drive current. Due to the pitch limit of lithography tools, it is further difficult to have pitch narrower than the design rule, which limits the effective use of the active area for FinFET. In the meanwhile, multiple-channel FET [3] is a good alternative choice because it can be fabricated without relying on the lithographical limit for active patterning. Multiple-channel FET is a new device structure wherein center gate is placed at the center of the fin to form a multi-channel. In this paper, we report our quantum-mechanical study on multiple-channel FET in an effort to optimize the device structure.