고주파 플라즈마 CVD에 의한 다이아몬드 박막의 합성

초록

Diamond thin films were deposited on Si wafer from a mixture of CH4 and H2 by RF PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3㎛. The microstructure of deposited diamond films were studied by using the following conditions : discharge power of 500W, H2 flow rate of 50sccm, chamber pressure of 20torr, and CH4 concentration of 0.3∼1%. The deposited diamond films showed that the crystallite was increased at the lower methane concentration. The deposited films were characterized by Scanning Electron Microscopy, Raman Spectroscopy and X-ray Diffraction method.