The Susceptibility of CMOS IC Devices to High Power Microwave by Magnetron

초록

We investigated the malfunction and the destruction characteristics of CMOS IC devices manufactured using three different technologies under high power microwave (HPM) impact by magnetron [1]. High power microwave system was rated at a microwave output of 0 to 1,000 W and at a frequency of 2.46 GHz. and was extracted into a standard WR-340 rectangular waveguide. CMOS ICdevices were located in the waveguide. COMS IC devices showed two types of damage, malfunction, which means no physical damage, was done to the system and after a reset the system returned to normal function, and destruction,which means the system incurred physical damage and operation could not be recovered without a hardware repair [2]. The surfaces of the destroyed CMOS IC devices were removed and thechip conditions were analyzed by SEM. The SEM analysis of the damaged devices showed onchipwire and bondwire destruction such as melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of semiconductors in an artificial microwave environment. References 1. C. D. Taylor, D. V. Giri, High-Power Microwave Systems and Effects. Washington D. C.: Tayloer & Francis, 1994. 2. D. Nitsch, M. Camp, F. Sabath, H. Ter, J. L., H. Garbe, "Susceptibility of Some Electronic Equipment to HPEM Threats," IEEE Transactions on Electromagnetic Compatibility, Vol. 46, 2004.