Organic Interface Engineering in Transition Metal Dichalcogenide Electronics: Overcoming Contact, Doping, and Stability Challenges

초록

Two-dimensional transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation electronics owing to their atomic thickness, tunable bandgaps, and clean van der Waals (vdW) surfaces. However, their intrinsic advantages are offset by persistent obstacles, including high contact resistance from Fermi-level pinning, the lack of reliable doping strategies, device-to-device variability, and environmental instability. Conventional semiconductor techniques are often incompatible with atomically thin TMDs, necessitating new approaches. Organic interface engineering provides a highly versatile approach to overcoming these hurdles by enabling chemically tunable, mechanically compliant, and vdW-compatible functionalization. Recent advances have shown that organic interlayers can lower contact resistance by up to three orders of magnitude, while charge-transfer and dipole-induced doping strategies enable precise and reversible control of both n- and p-type conduction. Additionally, organic passivation effectively mitigates variability caused by defects and environmental exposure, supporting stable device operation. Collectively, these methods have led to significant device-level achievements, including low-resistance TMD transistors, CMOS inverters with reduced power consumption, and robust, stable p-type conduction. This review highlights how organic interface engineering not only resolves fundamental integration barriers of TMD electronics but also expands their application horizons. The convergence of organic chemistry and 2D materials marks a pivotal direction toward low-power, scalable, and multifunctional device technologies beyond Moore's Law.

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