Optical and structural properties of silicon oxyfluoride thin films by ion beam assisted deposition ition

초록

Optical and structural properties of silicon oxyfluoride thin films prepared by an ion beam assisted deposition were investigated as a low refractive index thin film in optical coatings. Si or as a source material was evaporated by an e-beam gun in an oxygen backfilled chamber and a gas was used as an ion beam species. Refractive indices of silicon oxyfluoride thin films were lower than that of film and homogeneous or inhomogeneous depending on the source material and ion beam parameters. Si-F bonds at 936 and Si-O-phenyl bonds at 948 were observed by FTIR. SEM, XPS and RBS measurements showed that the ion beam bombardment on growing films induces an inclusion of F as well as a porosity in the films and results in the low index of silicon oxyfluoride films.