Junction geometry-dependent charge transfer in 1D PbI2 ? 2D WSe2 van der Waals heterostructures

초록

Elucidating the transport phenomena of charges/excitons and their energies across the interface of van der Waals (vdW) semiconductor heterostructures is essential for developing novel electronic/optoelectronic devices. Here we demonstrate mixed-dimensional heterostructures composed of vdW layered semiconducting materials ? i.e., two-dimensional (2D) monolayer tungsten diselenide (WSe2) and one-dimensional (1D) lead iodide (PbI2) nanowires. Specifically, the geometry of the heterointerface was modulated by controlling the layer stacking orientations (a- vs. c-axis) of 1D PbI2 nanowires. The layer orientations significantly affect interfacial charge transfer and corresponding excitonic emissions, which promises potential applications in the vdW semiconductor-based optoelectronic devices.