RF-PACVD에 의한 Hydrogenated carbon nitride 박막의 합성

초록

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate C≡N stretching mode(nitrile) C-H stretching mode, C-H bending mode, C=C stretching mode, C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD