Realization of black silicon layer using simple plasma fabrication process for application in solar cells

초록

Polished flat silicon surfaces have high reflectivity in visible lays. The minimization of reflection losses is very important for solar cells. Lowering surface reflectivity of silicon by texturization is one of the most important processes for improving the conversion photovoltaic efficiency of silicon solar cells. Many texturing techniques for fabricating antireflective silicon surfaces have been proposed, including mechanical diamond saw cutting, optical interference lithography, wet etching using catalysis of metal, and reactive ion etching, to produce so-called “black silicon”. In this paper, we attempted to chlorine and oxygen based inductively coupled plasma etching for formation of black silicon. The etched silicon surface shows almost zero reflectance in the visible region. The silicon surface is covered by columnar microstructures with diameter ranging from 100 to 200 nm, and height of microstructure depends on etching time. More detailed result and etching parameters will be discussed in presentation.