실리콘 표면에서의 화학흡착된 수소의 산소 원자 추출

초록

We have calculated the probability of OH (OD) formation and energy deposit of the reaction exothermicity in the newly formed OH (OD), particularly in its vibrational motion, in the gas - phase reactions O(g) + H(ad)/Si → OH(g) + Si and O(g) + D(ad)/Si → OD (g) + Si . The reaction probabilities are about 0.10 at gas temperature 1500K and surface temperature 300K. The vibrational and translational motions of product OH share most of the reaction energy. Increasing the initial vibrational state of the adsorbate from the ground state to v = 1, 2 and 3 cuause the vibrational energy of OH (OD) to rise nearly linearly, while the energes shared by other motions vary only slightly. The product vibrational excitation is strong in both OH and OD, leading to a population inversion. The amount of energy propagatee into the bulk solid phase is only about 10% of the reaction energy in the O(g) + D(ad)/Si reaction. The amount propagated to the solid in O(g) + H(ad)/Si is found to be somewhat larger.