2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

초록

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called "center-channel (CC) double-gate(DG) MOSFET".The device performanance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based upon the self-consistent solution of Poisson-Schrodinger equations and the current continuity equation.