ICP를 이용한 InP-도파로 소자의 제작 특성

초록

The etch process affects much on the characteristics of photonic devices due to the optical scattering and loss by the surface roughness. We introduced inductively coupled plasma (ICP) instead of reactive ion etching (RIE) for efficient etch and low damage. We report the tendency of etch rate variation by the process parameters, such as the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was improved more weak wet etching in the mixed solution of H2SO4:H2O (1:1).