Introduction of a Short Silylation Method Enabling the Low-Temperature Cu/SiO2 Hybrid Bonding

초록

In this study, low-temperature Cu/SiO2 hybrid bonding (HB) is achieved through interface silane treatment, enabling successful SiO2-SiO2 bonding. The Cu/SiO2 HB chips are coated with 2.0 wt% solutions of (3-aminopropyl)triethoxysilane (APS), Octyltriethoxysilane (OTS), and Hexadecyltriethoxysilane (HDS). With its primary amine group, the APS-coated Cu/SiO2 HB chips are well-bonded at room temperature, manifesting a narrow gap of ca. 20 nm. In the practical HB process, the pre-bonded APS-treated HB chips are annealed at a low temperature of 300 ℃, thereby preventing Cu surface oxidation and facilitating the strong bonding in HB chips. This study presents the method to enhance the bonding strength of hybrid bonding at low temperatures and emphasizes the importance of surface treatment in advanced technology for semiconductor packaging. 본 연구성과물은 2025년도 정부(교육부)의 재원으로 한국연구재단 의 지원을 받아 수행된 기초연구사업임(RS-2024-00464661).