레이저 유도 증착법을 이용한 Cu 의 패터닝 및 특성에 관한 연구

초록

Copper films have been deposited on glass substrate via a thermal decom- position of copper(II) formate using a focused Ar+ laser emitting at 514 nm. The growth kinetics of these Cu films was investigated as a function of laser power and scan speed which varied in the range of 70-150 mW and 0.1-20 mm/s, respectively. The resistivity of the copper films was a factor of about 20 higher than that of bulk value, but the resistivity decreased due to changes in morphology and porosity of the deposit after annealing at 300 ℃, 5 min. and was about 10 μΩ㎝.