실리콘 나노 돗 배열을 이용한 GaN 기반 light-emitting diode의 electroluminescence의 향상 FDTD 시뮬레이션

초록

We have proposed a novel method for the enhancement of light extraction efficiency in GaN-base light-emitting diodes using silicon nano dot array. In our simulation results, a periodic silicon nano dot array is placed on the top of the thin GaN LED surface. The high refractive index of the silicon nano dot causes diffraction effect for the entrapped light to escape the GaN layer. We have compared the light extraction enhancement of the silicon nano dot array with pyramid texturing and bare GaN layer.