대면적 플라즈마 소스에서의 ITO 식각균일도 향상

초록

한국전기전자재료학술대회논문집, LG산전 청주2공장 A large area plasma source using parallel 2×2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH4 gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350×300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique,