Two-Dimensional Quantum Mechanical Modeling of Strained-Si FinFETs on SiGe-On-Insulator(SGOI)

초록

As critical device features begin to approach 100nm, there are certain impediments like short channel effects (SCE), oxide and silicon tunneling, difficulty in litho-graphic patterning, etc [1]. Double-gate (DG) MOSFET structures can overcome these limitations to transistor scal-ing [1]. Among DG MOS devices, the FinFET is consid-ered to be the most promising candidate due to its simple process [2]. Meanwhile, the sub-100nm MOSFETs with a high mobility channel using strained Si are currently stir-ring a strong interest as high performance and low power CMOS device structures owing to the suppression of inter-valley scattering and the low in-plane conduction mass by the biaxial tensile strain [3,4], and the velocity overshoot effect [5,6].