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Ar+ ion laser를 이용한 단결정/다결정 Si 식각 특성 분석
Analysis of single/poly crystalline Si etching characteristics using Ar+ ion laser
초록
In this paper, Ar+ ion laser etching process of single/poly crystalline silicon with CCl2F2 gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile ethched in repeating scanning cycle. From the etching of 2.6um thick polycrystaaline Si deposited on insulator, trench with flatbottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.
- 제목
- Ar+ ion laser를 이용한 단결정/다결정 Si 식각 특성 분석
- 제목 (타언어)
- Analysis of single/poly crystalline Si etching characteristics using Ar+ ion laser
- 저자
- CHEON LEE
- 학회명
- '98 대한전기학회 추계학술대회 논문집